Optical phonons in InAs and AlAs quantum dot structures
Identifieur interne : 000458 ( Russie/Analysis ); précédent : 000457; suivant : 000459Optical phonons in InAs and AlAs quantum dot structures
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Abstract
We present a comparative study of InAs/AlAs periodical structures with InAs and AlAs quantum dots (QD's) using infrared and Raman spectroscopies. Raman spectra were measured in a backscattering geometry using a micro-Raman setup to directly determine the transverse optical (TO) and longitudinal optical (LO) resonance frequencies. Remarkable features observed in the Raman spectra correspond to LO and TO phonons localised in AlAs and InAs QD's. The observed phonon lines are shifted from their bulk values due to tensile and compressive strain in AlAs and InAs QD's. The experimental IR spectra reveal the only minima at the TO phonon frequency positions attributed to the Fröhlich modes. IR spectra were calculated supposing that the QD structures are described by the effective dielectric function within Bruggeman approximation taking into account dielectric properties of matrix and QD's materials and the volume fraction of QD's. Resonance frequencies were taken from an analysis of Raman spectra. A good correspondence of the experimental and calculated IR spectra proves the validity of the approach used.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Optical phonons in InAs and AlAs quantum dot structures</title><author><name sortKey="Milekhin, A G" uniqKey="Milekhin A">A. G. Milekhin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, Lavrentjev av.13</s1><s2>630090 Novosibirsk</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>630090 Novosibirsk</wicri:noRegion></affiliation></author><author><name sortKey="Toropov, A I" uniqKey="Toropov A">A. I. Toropov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, Lavrentjev av.13</s1><s2>630090 Novosibirsk</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>630090 Novosibirsk</wicri:noRegion></affiliation></author><author><name sortKey="Bakarov, A K" uniqKey="Bakarov A">A. K. Bakarov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, Lavrentjev av.13</s1><s2>630090 Novosibirsk</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>630090 Novosibirsk</wicri:noRegion></affiliation></author><author><name sortKey="Ladanov, M Yu" uniqKey="Ladanov M">M. Yu. Ladanov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, Lavrentjev av.13</s1><s2>630090 Novosibirsk</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>630090 Novosibirsk</wicri:noRegion></affiliation></author><author><name sortKey="Zanelatto, G" uniqKey="Zanelatto G">G. Zanelatto</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Departamento de Fisica, Universidade Federal de Sao Carlos, C.P.676</s1><s2>Sao Carlos, SP</s2><s3>BRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Brésil</country><wicri:noRegion>Sao Carlos, SP</wicri:noRegion></affiliation></author><author><name sortKey="Galzerani, J C" uniqKey="Galzerani J">J. C. Galzerani</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Departamento de Fisica, Universidade Federal de Sao Carlos, C.P.676</s1><s2>Sao Carlos, SP</s2><s3>BRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Brésil</country><wicri:noRegion>Sao Carlos, SP</wicri:noRegion></affiliation></author><author><name sortKey="Schulze, S" uniqKey="Schulze S">S. Schulze</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institut für Physik, Technische Universität Chemnitz</s1><s2>09107, Chemnitz</s2><s3>DEU</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>09107, Chemnitz</wicri:noRegion><wicri:noRegion>Technische Universität Chemnitz</wicri:noRegion><wicri:noRegion>09107, Chemnitz</wicri:noRegion></affiliation></author><author><name sortKey="Zahn, D R T" uniqKey="Zahn D">D. R. T. Zahn</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institut für Physik, Technische Universität Chemnitz</s1><s2>09107, Chemnitz</s2><s3>DEU</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>09107, Chemnitz</wicri:noRegion><wicri:noRegion>Technische Universität Chemnitz</wicri:noRegion><wicri:noRegion>09107, Chemnitz</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">05-0034689</idno><date when="2004">2004</date><idno type="stanalyst">PASCAL 05-0034689 INIST</idno><idno type="RBID">Pascal:05-0034689</idno><idno type="wicri:Area/Main/Corpus">00AA12</idno><idno type="wicri:Area/Main/Repository">00B004</idno><idno type="wicri:Area/Russie/Extraction">000458</idno></publicationStmt><seriesStmt><idno type="ISSN">0169-4332</idno><title level="j" type="abbreviated">Appl. surf. sci.</title><title level="j" type="main">Applied surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium arsenides</term><term>Backscattering</term><term>Dielectric function</term><term>Indium arsenides</term><term>Infrared spectra</term><term>Inorganic compounds</term><term>Optical phonons</term><term>Quantum dots</term><term>Raman spectra</term><term>Resonance frequency</term><term>S matrix</term><term>Semiconductor materials</term><term>Strains</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Phonon optique</term><term>Point quantique</term><term>Spectre IR</term><term>Spectre Raman</term><term>Rétrodiffusion</term><term>Fréquence résonance</term><term>Déformation mécanique</term><term>Fonction diélectrique</term><term>Matrice S</term><term>Indium arséniure</term><term>Semiconducteur</term><term>Aluminium arséniure</term><term>As In</term><term>InAs</term><term>Al As</term><term>AlAs</term><term>Composé minéral</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We present a comparative study of InAs/AlAs periodical structures with InAs and AlAs quantum dots (QD's) using infrared and Raman spectroscopies. Raman spectra were measured in a backscattering geometry using a micro-Raman setup to directly determine the transverse optical (TO) and longitudinal optical (LO) resonance frequencies. Remarkable features observed in the Raman spectra correspond to LO and TO phonons localised in AlAs and InAs QD's. The observed phonon lines are shifted from their bulk values due to tensile and compressive strain in AlAs and InAs QD's. The experimental IR spectra reveal the only minima at the TO phonon frequency positions attributed to the Fröhlich modes. IR spectra were calculated supposing that the QD structures are described by the effective dielectric function within Bruggeman approximation taking into account dielectric properties of matrix and QD's materials and the volume fraction of QD's. Resonance frequencies were taken from an analysis of Raman spectra. A good correspondence of the experimental and calculated IR spectra proves the validity of the approach used.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0></fA01><fA03 i2="1"><s0>Appl. surf. sci.</s0></fA03><fA05><s2>234</s2></fA05><fA06><s2>1-4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optical phonons in InAs and AlAs quantum dot structures</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>The Ninth International Conference on the Formation of Semiconductor Interfaces, ICFSI-9, Madrid, ETSII, Spain, September 15-19, 2003</s1></fA09><fA11 i1="01" i2="1"><s1>MILEKHIN (A. G.)</s1></fA11><fA11 i1="02" i2="1"><s1>TOROPOV (A. I.)</s1></fA11><fA11 i1="03" i2="1"><s1>BAKAROV (A. K.)</s1></fA11><fA11 i1="04" i2="1"><s1>LADANOV (M. Yu.)</s1></fA11><fA11 i1="05" i2="1"><s1>ZANELATTO (G.)</s1></fA11><fA11 i1="06" i2="1"><s1>GALZERANI (J. C.)</s1></fA11><fA11 i1="07" i2="1"><s1>SCHULZE (S.)</s1></fA11><fA11 i1="08" i2="1"><s1>ZAHN (D. R. T.)</s1></fA11><fA12 i1="01" i2="1"><s1>FLORES (F.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>DE SEQOVIA (José L.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Institute of Semiconductor Physics, Lavrentjev av.13</s1><s2>630090 Novosibirsk</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Departamento de Fisica, Universidade Federal de Sao Carlos, C.P.676</s1><s2>Sao Carlos, SP</s2><s3>BRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="03"><s1>Institut für Physik, Technische Universität Chemnitz</s1><s2>09107, Chemnitz</s2><s3>DEU</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA15 i1="01"><s1>Universidad Autónoma de Madrid</s1><s2>Madrid E 28049</s2><s3>ESP</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>Instituto de Ciencia de Materiales de Madrid, CSIC</s1><s3>ESP</s3><sZ>2 aut.</sZ></fA15><fA20><s1>45-49</s1></fA20><fA21><s1>2004</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16002</s2><s5>354000110566460080</s5></fA43><fA44><s0>0000</s0><s1>© 2005 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>13 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>05-0034689</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied surface science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We present a comparative study of InAs/AlAs periodical structures with InAs and AlAs quantum dots (QD's) using infrared and Raman spectroscopies. Raman spectra were measured in a backscattering geometry using a micro-Raman setup to directly determine the transverse optical (TO) and longitudinal optical (LO) resonance frequencies. Remarkable features observed in the Raman spectra correspond to LO and TO phonons localised in AlAs and InAs QD's. The observed phonon lines are shifted from their bulk values due to tensile and compressive strain in AlAs and InAs QD's. The experimental IR spectra reveal the only minima at the TO phonon frequency positions attributed to the Fröhlich modes. IR spectra were calculated supposing that the QD structures are described by the effective dielectric function within Bruggeman approximation taking into account dielectric properties of matrix and QD's materials and the volume fraction of QD's. Resonance frequencies were taken from an analysis of Raman spectra. A good correspondence of the experimental and calculated IR spectra proves the validity of the approach used.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60</s0></fC02><fC02 i1="02" i2="3"><s0>001B70</s0></fC02><fC02 i1="03" i2="3"><s0>001B80</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Phonon optique</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Optical phonons</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Point quantique</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Quantum dots</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Spectre IR</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Infrared spectra</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Spectre Raman</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Raman spectra</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Rétrodiffusion</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Backscattering</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Fréquence résonance</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Resonance frequency</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Frecuencia resonancia</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Déformation mécanique</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Strains</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Fonction diélectrique</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Dielectric function</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Matrice S</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>S matrix</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>16</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>16</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Aluminium arséniure</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Aluminium arsenides</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>As In</s0><s4>INC</s4><s5>32</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>33</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Al As</s0><s4>INC</s4><s5>34</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>AlAs</s0><s4>INC</s4><s5>35</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Composé minéral</s0><s5>62</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>62</s5></fC03><fN21><s1>017</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>ICFSI: International Conference on the Formation of Semiconductor Interfaces</s1><s2>9</s2><s3>Madrid ESP</s3><s4>2003-09-15</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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